Variable range hopping conduction in the lowest temperature region

Abstract

Experiment on doped semiconductor indicates that there exists a temperature region of hopping conduction where the resistivity varies as T -2, deviating from the Mott formula exp [ (T 1 T ) 1 4 ] . A new version of the variable range hopping is proposed taking into account the effect of random nature of the system on the correlation of the energy levels of localized states, and is shown to lead to T -2 dependence of the resistivity in the lowest temperature region.