Abstract
Vapor phase transport of cadmium telluride was studied by controlling the partial pressure of one of the constituent elements. A reservoir chamber at one end of the growth tube is used to control the partial pressure of tellurium or cadmium. When the partial pressure in the reservoir chamber is high, the transport rate is limited by the diffusion process in the vapor phase. For the low partial pressure, the transport rate is limited by the vaporization process at high growth temperature. The transport rate was analysed by assuming the probable reactions on the surface of the crystal.
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