Abstract
CdTe single crystals were grown by the sublimation method under the controlled partial pressures of one of the constituent elements by using a closed quartz tube with a Cd or Te reservoir chamber at one end. Supersaturation was controlled by regulating the temperature difference Δ T between the source and growth chambers under a specified partial pressure. The observed transport rate as a function of the average temperature gradient Δ T/Δ X or Δ T was compared with the calculated one for the case where the diffusion process in the vapor phase is rate-determining. A large difference between the calculated and observed rate was found only when the transport experiments were performed under controlled P Te 2 and large Δ T/Δ X. However, the cause of this large difference is due to the fact that steady-state transport is not rapidly realized and the transport rate is still limited by the diffusion process in the vapor phase even under such a condition. The reason why steady-state transport is not rapidly realized seems to be closely related to the large partial pressure difference of the constituent element (Δ P Cd = -Δ P Te 2 ) in the growth tube.
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