Vapor phase epitaxy of InGaAsP by the chloride single flat temperature zone method

Abstract

The VPE growth of InGaAsP alloy using the chloride single flat temperature-zone (SFT) method is described. The basic data, such as growth kinetics, optical and electrical properties, of InGaAsP layers grown by the chloride SFT method are shown. It is seen that the chloride SFT method provides good crystalline InGaAsP layer reproducibly. The same slow kinetic process as in other III-V compounds and alloys limits the rate of the InGaAsP growth. Moreover, InGaAsP/InP heterostructure is prepared, and a photoluminescence peak width as narrow as 13.5 meV at 4.2 K is obtained, from 100 Åsingle quantum well.