Abstract
Abstract The VPE growth of InGaP using the single flat temperature zone (SFT) method is described. The growth aspects from a thermodynamic point of view and the growth kinetics of InGaP lattice-matched to GaAs are discussed. It is shown that the growth of InGaP is feasible by the SFT method and the same slow kinetic process as in other III–V compounds and alloys limits the rate of the InGaP growth.
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