Abstract

The electrical properties of VPE GaAs grown by the single flat temperature zone (SFT) method are described. The method was carried out in 4 systems. It is seen that high quality GaAs can reproducibly be grown at growth temperatures as low as 650°C in the GaAs(crust)–AsCl3–H2 system. For the Ga–AsH3–HC–H2 systems, it is suggested that the impurities from AsH3 deteriorate the electrical properties. The results of the Ga(uncrusted)–AsCl3–H2 system indicate that crust formation is not necessary for the preparation of high purity GaAs. Maximum mobility has been obtained in the GaAs(crust)–AsCl3–He–H2 system with the value of 198300 cm2/V·sec (77 K) at an AsCl3 mole fraction of 2.0×10-3. Comparison of the electrical properties between the SFT and the conventional methods shows the present method can produce high purity GaAs in the low AsCl3 mole fraction range. In addition, the so-called mole fraction effect is not observed for this method.

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