Abstract
Ultrathin metal oxide films with electrical properties suitable for gate dielectrics application have been formed by a new room-temperature deposition process which combines adsorption of metal-containing precursors from the vapor phase with liquid-phase hydrolysis.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
