Abstract
Abstract We report on the evaluation of the structure of VOx thin films under different fabrication conditions of the chemical solution deposition method and the pH response of an extended gate field effect transistor (EGFET)-type pH sensor. Polycrystalline V2O5 thin films of 30 and 60 nm thick and amorphous VOx thin films of about 30 nm thick were successfully prepared under different precursor solution conditions. Using polycrystalline V2O5 thin films and amorphous VOx thin films as an extended gate (EG) electrode, protypes of EGFET-type pH sensors were fabricated and investigated their pH response characteristics. The average pH responsibility of 64 mV/pH, which exceeded the theoretical Nernst limit, was observed over a wide pH range from 2.4 to 8.0 in the amorphous VOx extended gate sensor. It was also found that stable pH response measurements could be performed on amorphous VOx film samples.
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