Abstract
The conduction type conversion from n to p type occurs in molecular beam deposited chalcopyrite structure Cu-In-Se thin films by ion doping using the V family elements such as P, Sb, and Bi. Homojunction diodes can be fabricated by a P ion doping process. Ar ion implantation cannot change the conduction type, but can only enlarge the conductivity of as-implanted films as observed in the films implanted with V family elements. The V family elements' substitution of Se changes the valence states of the films.
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