Abstract
The solar cell light absorber Cu（In,Ga）（Se,S）2（CIGSS） thin films were prepared by annealing the electrodeposited Cu（In,Ga）Se2（CIGS） precursors in H2S ambient at 500 ℃. The precursors and annealed films were characterized by energy dispersive X-ray spectroscopy, Auger electron spectroscopy, scanning electron microscopy, X-ray diffraction and Raman scattering. The results show that the complete removal of oxygen atom from the film and a substitution of Se by S can be achieved by H2S-annealing. Furthermore, the depth profiles of constituent elements become more uniform, and the Cu-Se micro-phase can be eliminated by H2S-annealing. Moreover, the CIGSS films have good crystallinity and smaller crystal lattice parameters with S and Ga incorporation into the chalcopyrite structure.
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