Abstract
Abstract We report on the influence of strain on the valence band electronic structure of the epitaxial Fe3O4 heterostructures of different thickness prepared by pulsed laser deposition on single crystalline Si(100) and MgO(100) substrates. The valence band electronic structure of these epitaxial heterostructures was investigated using angle-integrated photoemission spectroscopy at room temperature in the energy range 45-65 eV. Depending on the strain state of the films, the feature at 2.7 eV (3.5 eV) shifts towards (away) the Fermi level with an increase (decrease) in strain resulting in decrease of density of states (DOS) of the minority spin Fe(A) 3d-eg band and enhancement in DOS for the majority spin Fe(B) 3d-t2g band. The effect is more pronounced in the case of films on MgO(100) substrate in comparison to Si(100) substrate
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