Abstract
In this paper, vertical ZnO nanosheets are synthesized on Si substrate using a simple solution-based method at room temperature to realize a field emission device. The thin nanosheets that were perpendicular to the Si substrate surface were mutually interwoven into net and formed a continuous nanosheet film, with a unique surface morphology and a high surface-to-volume ratio. The improvement in the FE properties under UV illumination is attributed to the generation of a large number of excited electrons and the edge effect, and demonstrates that the presented route is a simple route for realizing field emission devices. This method has low cost and effectively improves the FE properties of the devices.
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