Abstract
In this paper, vertical ZnO nanosheets are synthesized on a Si substrate using a simple solution-based method at room-temperature to realize a field emission device. The thin nanosheets that were perpendicular to the Si substrate surface were mutually interwoven into net-shaped and formed a continuous nanosheet film, with a unique surface morphology and a high surface-to-volume ratio. The length and diameter of the ZnO nanosheets was 1.8μm and 21nm, respectively. The turn-on electric fields and enhancement factor β of devices were measured as 5.4V∙μm−2 and 1014V∙μm−2, respectively.
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