UV-Cured Reactive Mesogen-YInZnO Hybrid Materials as Semiconducting Channels in Thin-Film Transistors Using a Solution-Process

S Y Kim,D.-H Kim,J.-W Lee,Y H Jung,H.-G Park,M.-J Cho,T W Kim,D.-S Seo,I Yun

doi:10.1149/2.0031503ssl

Abstract

Electrical performance of thin-film transistors (TFTs) is important for their applications. Solution-processed TFTs have low mobility and high sub-threshold swings (S.Ss) because there are many pores and pin-holes in the films. These characteristics are attributed to electron trapping in the YInZnO (YIZO) channel, the SiO2 gate insulator, or their interface. We fabricated hybrid YIZO TFTs with and without UV radiation, and observed that UV-curing of the film affected TFT performance through promoting a response to reactive mesogen (RM). The UV irradiated TFT showed better performance because of the alignment of the channel materials in the source-drain direction. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. [DOI: 10.1149/2.0031503ssl] All rights reserved.

Highlights

The Recently, amorphous oxide semiconductors (AOSs) have been researched extensively for a use as the channel layer in thin-film transistors (TFTs),[1,2,3] which exhibit superior electrical and optical characteristics to amorphous Si (a-Si) TFTs. a-Si TFTs have a relatively low mobility of approximately 0.5 cm2/Vs because of the angular distortion of the strongly directive sp[3] orbital.[1]
Reactive mesogen (RM) was added to the YIZO system to obtain high electrical performance by inducing the channel material to become positioned along the source-drain direction
When a hybrid YIZO film is irradiated with UV radiation, a uniaxial directivity of the channel material is formed because reactive mesogen (RM) is sensitive to UV light.[9,10,11]

Summary

Introduction

The Recently, amorphous oxide semiconductors (AOSs) have been researched extensively for a use as the channel layer in thin-film transistors (TFTs),[1,2,3] which exhibit superior electrical and optical characteristics to amorphous Si (a-Si) TFTs. a-Si TFTs have a relatively low mobility of approximately 0.5 cm2/Vs because of the angular distortion of the strongly directive sp[3] orbital.[1]. Solution-processed TFTs have low electrical performance in terms of characteristics such as low mobility and high sub-threshold swing (S.S) because they contain many pores and pin-holes, which lead to electron trapping.[6,7,8] reactive mesogen (RM) was added to the YIZO system to obtain high electrical performance by inducing the channel material to become positioned along the source-drain direction.

Results

Conclusion