Abstract
Amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) are high performance transparent oxide semiconductors (TOS) that are attractive alternatives to poly-Si TFTs, because they provide better uniformity in terms of device characteristics, such as the threshold voltage and mobility. However, the electrical performance of flexible TFTs should have mechanical robustness against substrate bending and stretching without resultant changes. In this regard, many researchers have focused on improving mechanical stability as well as electrical performance of TFTs, such as elasticity and durability under artificial conditions. In this paper, the mechanical characteristics of an a-IGZO based inverters were numerically investigated. The results were graphically depicted when the device was bent by a total of 10% of its length in the x-axis. The mechanical properties of IGZO were assumed to be similar with the zinc oxide (ZnO).
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