Influence of irradiation atmospheres on the performance of ultraviolet-assisted solution-processed NbZnSn oxide thin film transistors

Abstract

In this study, we study the influence of ultraviolet (UV) light irradiation [the UV source (254 nm) and the UV-ozone source (6% 185 nm and 94% 254 nm)] and irradiation atmospheres on the characteristics of solution-processed NbZnSn oxide thin film transistors (TFTs). The experimental results indicate the ultraviolet-visible absorption spectrum present a strong absorption at wavelengths less than 300 nm, implying that the UV source and UV-ozone source can be effectively absorbed by the NbZnSn oxide precursor. From the infrared (IR) spectra, the UV-ozone source illumination can accelerate the reaction of solution processed NbZnSn oxide channels. An improvement of device performance is achieved by the NbZnSn oxide channel layers with UV-ozone source. In addition, we also investigate the effects of treatment atmosphere (i.e., N2 or O2) on the electrical performance of TFTs. The influence of UV irradiation and irradiation atmospheres on the material properties of NbZnSn oxide channels and electrical characteristics of the NbZnSn oxide devices is also studied. The correlations between the UV treatment and treatment atmospheres on the TFT performance are investigated.