Abstract
The effects of antimony (Sb) doping on solution-processed indium oxide (InOx) thin film transistors (TFTs) were examined. The Sb-doped InSbO TFT exhibited a high mobility, low gate swing, threshold voltage, and high ION/OFF ratio of 4.6 cm2/V s, 0.29 V/decade, 1.9 V, and 3 × 107, respectively. The gate bias and photobias stability of the InSbO TFTs were also improved by Sb doping compared to those of InOx TFTs. This improvement was attributed to the reduction of oxygen-related defects and/or the existence of the lone-pair s-electron of Sb3+ in amorphous InSbO films. (© 2014 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
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