Abstract
A study was made of the influence of the stoichiometry profile of films in the As–S system on the dynamics of their dissolution in an alkali etchant. It was found that the surface changes in the stoichiometry of As–S films exposed to laser radiation influenced the rate of dissolution. The dynamics of dissolution of glassy chalcogenide semiconductor films with given stoichiometry profiles was analyzed and methods of formation of grating structures with a high diffraction efficiency were considered.
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