Abstract
The theoretical description of photochemical transformation process of glassy chalcogenide semiconductor films has bene developed. The effect of pulsed ArF excimer laser radiation on glassy chalcogenide semiconductor is analyzed. It is found that photochemical transformation of AsSe is characterized by optical sensitivity about 3 cm<SUP>3</SUP>/kJ and threshold radiation intensity about 17 kJ/(cm<SUP>2</SUP> sec).
Published Version
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