Abstract
In this paper, a tensile-strained layer is used to control the quantum dot arrangements. A 3nm GaAs tensile-strained layer is grown on InP (001) substrate, and a four-monolayer InAs compressed layer is then grown on top by LP-MOVPE. Atomic force microscopy (AFM) measurements were performed. AFM images indicate that the InAs quantum dots are arranged along two orthogonal directions, their diameter is about 30nm, the size fluctuation is only 10%, and their density is 8.8×109cm−2, which is higher than that grown directly on InP or GaAs substrates. An identical structure, except for the presence of 30nm of GaAs, was also grown. The islands on top of the 30nm GaAs are mainly very big and rectangular in shape. We demonstrate that these characteristics originate from the modulated stress field of the GaAs tensile-strained layer.
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