Abstract
Optical communication wavelength emissions from the quantum dots (QDs) structures prepared on (001)-oriented GaAs substrates are discussed. A new growth technique of low-stressed InAs QDs on the AlGaSb layer in a low lattice-mismatched (1.3%) InAs/AlGaSb system is presented. The average height and diameter of the 4-ML InAs QDs on AlGaSb are evaluated to 5.8 nm and 45.2 nm respectively with an average density of 2.18 x 1010 /cm2 using atomic force microscope (AFM) measurements. There is structural selectivity between the QDs layer and the flat hetero-interface under changing growth conditions in the InAs/AlGaSb system. Long-wavelength PL emissions around 1.3 µm and 1.55 µm can be achieved by embedding InAs QDs in AlGaSb layers. Therefore it is expected that low-stressed InAs QDs grown on a AlGaSb layer prepared on a GaAs substrate will be useful in the fabrication of novel QDs devices for optical-communication networks.
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