Abstract

Possibilities of local anodic oxidation (LAO) for superdense information recording using a negative potential on probe of atomic force lithographer (AFL) are investigated in this paper. It is shown that the intensity of LAO surface of metals and semiconductors significantly depends on parameters such as time of oxidation, humidity, type of oxidizable material and anode-cathode potential difference. The possibility of obtaining structures for storage nanodevices is experimentally proved.

Highlights

  • У роботі досліджені можливості методу локального анодного окислення (ЛАО) для отримання надщільного запису інформації з використанням негативного потенціалу на зонді атомно-силового літографа (АСЛ)

  • Possibilities of local anodic oxidation (LAO) for superdense information recording using a negative potential on probe of atomic force lithographer (AFL) are investigated in this paper

  • It is shown that the intensity of LAO surface of metals and semiconductors significantly depends on parameters such as time of oxidation, humidity, type of oxidizable material and anode-cathode potential difference

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Summary

Introduction

У роботі досліджені можливості методу локального анодного окислення (ЛАО) для отримання надщільного запису інформації з використанням негативного потенціалу на зонді атомно-силового літографа (АСЛ). Possibilities of local anodic oxidation (LAO) for superdense information recording using a negative potential on probe of atomic force lithographer (AFL) are investigated in this paper. Важливою особливістю ЛАО є кінетика процесу локального зондового окислення плівок різних металів і напівпровідників.

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