Abstract

AbstractA Si-YBaCuO intermixed system has been formed using rapid thermal annealing (RTA) of Cu/BaO/Y2O2/Si layered structures, which were deposited on MgO substrates by electron-beam evaporation. The electrical and structural properties of the Si-YBaCuO system have been analyzed by resistivity, X-ray diffraction, scanning electron microscope, X-ray photoelectron spectroscopy and Auger depth profiling measurements. It was found that Si mixed with YBaCuO during annealing, thus creating an insulating film. This effect has been used to pattern YBaCuO films. The patterning process was carried out on an underlying silicon layer, rather than the YBaCuO film itself, using conventional photolithography or laser etching. After YBaCuO film deposition and RTA, the patterned region became superconducting separated by Si-YBaCuO intermixed areas. Micron-sized line features with Tc's above 77 K have been demonstrated.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.