Abstract
The process of Electron Beam-Physical Vapor Deposition (EB-PVD) preparing SiC coating with liquid evaporation was firstly discussed from a thermodynamic viewpoint. The results showed that the ratio of SiC in the as-deposited coating gradually increases and tends to reach a stable maximum of 0.73 with the evaporation temperature increase from 2500 K to 3400 K. To verify the thermodynamic analysis, amorphous SiC coating was deposited on Si substrate by EB-PVD at 3100 K. SiC concentration across the cross section of coating was calculated from the area of elements spectrum in X-ray photoelectron spectroscopy (XPS) depth profile analysis. The results showed that the average SiC concentration was about 0.7.
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