Abstract
Summary The method described for the analysis of III—V semiconducting materials by sparksource mass spectrometry is especially suitable for the characterization of indium phosphide single crystals. As a means of standardization, some of the crystals were doped either uniformly during growth or by implantation of a well-defined dopant at levels of 1014–1015 atoms cm-2. Implantation is shown to be valuable for providing standards at low levels of impurities. The main impurities in indium phosphide single crystals are Si, C, O, B, N, Al, (S), Zn and As, but sixteen other elements are present below the detection limit. In a single crystal grown by the liquid encapsulation technique, two types of impurity segregation, along the axis of growth and along the radial axis, are revealed.
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