Abstract
Single crystal indium phosphide has been grown by the LEC process from melts containing up to 20 wt% excess indium. The electrical properties of the crystals were measured using the Van der Pauw method. Chemical impurity concentrations were determined by spark source mass spectrometry. Crystals grown from 20 wt% excess In melts were n-type with N D − N A =3×10 15 cm -3 and mobilities of 30,000 cm 2 V -1 s -1 at 77 K. These are significantly purer than equivalent undoped crystals grown from stoichiometric melts.
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