Abstract
The results of investigations of semiconductor detectors on the basis of epitaxial layers of gallium arsenide for detecting x rays and low-energy radiation are examined. It is shown that epitaxial layers ranging in thickness from 60 to 300 µm with current carrier density ≤5·1013 cm−3 and electron mobility ≥6000 cm2/(V·sec) at 300 K hold promise for such detectors.
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