Abstract
This paper presents the results of studies of the photoluminescence intensity distribution in various sections of the surface of epitaxial layers of gallium arsenide grown on silicon substrates. It is established that the epitaxial layers have a block structure in the form of radiative areas separated by dark (nonradiative) boundaries, whose shape depends on the substrate's crystallographic orientation. It is assumed that the block structure is associated with internal stresses that arise in the epitaxial layers because of differences of the lattice constants and thermal expansion coefficients of the connected materials.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
