Abstract
Titanium dioxide, when doped with nitrogen, exhibits significant efficacy in various photocatalytic and photoelectrochemical applications. However, precise adjustment of nitrogen doping concentrations and a proper balance between substitutional to interstitial nitrogen are essential for optimal device functionality. Sputtering, a plasma-based technology, excels in achieving high-quality nitrogen-doped titanium dioxide films that maintain this stability. As the most widely used method for producing nitrogen-doped titanium dioxide, sputtering faces challenges related to controlled growth. Discrepancies between nitrogen gas flow rates and the resulting nitrogen content in thin films have been noted, yet comprehensive analyses of these inconsistencies are scarce. This oversight reflects a broader trend in semiconductor materials where fundamental properties and mechanisms are often overshadowed by practical applicability. In this study, we focus on plasma species and energy in the sputtering process, employing plasma optical emission spectroscopy and detailed discharge parameter monitoring to gain a nuanced understanding of plasma kinetics. This approach allows us to integrate plasma characteristics with doping levels, successfully resolving longstanding discrepancies in growth of nitrogen-doped titanium dioxide films.
Published Version
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