Universal alignment of surface and bulk oxygen levels in semiconductors

Abstract

Oxygen and hydrogen are the two most important impurities in semiconductors because of their ubiquitous presence in growth and device processing environments, and consequently, their incorporation strongly influences electronic and electrical properties. Therefore, a deeper understanding of the interaction of these species with the semiconductor surface and bulk defects is necessary for enabling the development of devices based on them, such as photovoltaic and photocatalytic systems and fuel cells. It is shown here, through the analysis of the reported surface work function values and substitutional bulk O-defect energies, that the surface Fermi level of semiconductors with physisorbed O2 lies universally at approximately −5.1 eV below the vacuum level. Similarly, the results show that the energy of substitutional bulk O-related amphoteric defects incorporated during the crystal growth also has a universal energy of ∼−5.0 eV with respect to the vacuum level for most semiconductors investigated. It is shown that the process of “surface transfer doping” involving an adsorbed water film on the semiconductor surface is likely responsible for the universal alignment of oxygen levels.