Abstract
Atomic impurities are critical for many technologies. They are used to engineer the optical and electronic properties of semiconductors for applications such as transistors, solar cells, light-emitting diodes (LEDs), and lasers, as well as to store energy for applications such as batteries and electrochemical cells. While the characterization and understanding of impurities in bulk semiconductors is well developed, new challenges arise at the nanoscale. In particular, methods are needed to characterize structures that may only contain a few impurity atoms. With such techniques, a fundamental understanding of how atomic impurities affect the properties of semiconductor nanostructures could be more fully developed. In this review, we give a brief introduction to the benefits and challenges associated with the incorporation of impurities in nanoscale structures, a process known as doping. We then focus on techniques used to characterize and image atomic impurities in semiconductor nanostructures. Advances in...
Published Version
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