Abstract
This study investigated the unique reliability characteristics of tunneling field effect transistors (TFETs) by comparing the effects of positive bias temperature instability (PBTI) and hot carrier injection (HCI) stresses. In case of hot carrier injection (HCI) stress, the interface trap generation near a p/n+ region was the primary degradation mechanism. However, strong recovery after a high-pressure hydrogen annealing and weak degradation at low temperature indicates that the degradation mechanism of TFET under the HCI stress is different from the high-energy carrier stress induced permanent defect generation mechanism observed in MOSFETs. Further study is necessary to identify the exact location and defect species causing TFET degradation; however, a significant difference is evident between the dominant reliability mechanism of TFET and MOSFET.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
