Abstract
Uniform resistive switching properties were observed in fully transparent indium-tin-oxide (ITO)/TiO2 film/F-doped SnO2 (FTO) devices where the TiO2 films were fabricated by chemical solution deposition method. In addition to high transmittance of above 70% for visible light, good resistive switching parameters, such as centralized reset and set voltages, stable resistance values at high and low resistance states (read at 0.2 V), and good retention data (up to 10000 s) also presented in the transparent memory devices. The dominant conducting mechanisms were Ohmic behavior and Schottky emission at low resistance state and high resistance state. The resistive switching phenomenon was explained by formation and rupture of the filaments, in which oxygen ions migration and current-induced thermal effect play important roles. Our results show the potential application of the ITO/TiO2/FTO cell in transparent electronics devices.
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