Resistive switching properties and physical mechanism of europium oxide thin films

Abstract

A forming-free resistive switching effect was obtained in Pt/Eu2O3/Pt devices in which the Eu2O3 thin films were fabricated by a chemical solution deposition method. The devices show unipolar resistive switching with excellent switching parameters, such as high resistance ratio (107), stable resistance values (read at 0.2 V), low reset voltage, good endurance, and long retention time (up to 104 s). On the basis of the analysis of the current–voltage (I–V) curves and the resistance-temperature dependence, it can be concluded that the dominant conducting mechanisms were ohmic behavior and Schottky emission at low resistance state and high resistance state, respectively. The resistive switching behavior could be explained by the formation and rupture of conductive filament, which is related to the abundant oxygen vacancies generated in the deposition process. This work demonstrates the great potential opportunities of Eu2O3 thin film in resistive switching memory applications, which might possess distinguished properties.