Abstract
The hole mobility in a high Ge-content (110) SiGe inversion layer is measured and simulated by a split capacitance–voltage method and a quantized k⇀·p⇀ method, respectively. The calibrated model reproduces our experimental channel mobility measurements for the biaxial compressive strain SiGe on (110) substrate. We also explore the impact of external mechanical uniaxial stress on the SiGe (110) p-channel metal oxide semiconductor field effect transistor (PMOSFET). We obtained the corresponding piezoresistance coefficients of the SiGe (110) PMOSFET with external mechanical uniaxial stress parallel and perpendicular to the channel direction. Our study shows the effectiveness in combining external mechanical uniaxial stress and intrinsic biaxial compressive strain for the SiGe (110) PMOSFET.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
