Undoped high mobility two-dimensional hole-channel GaAs∕AlxGa1−xAs heterostructure field-effect transistors with atomic-layer-deposited dielectric

Abstract

The authors have fabricated undoped p-channel GaAs∕AlxGa1−xAs heterostructure field-effect transistors with nearly ideal drain current-voltage characteristics, using atomic-layer-deposited Al2O3 as the dielectric, and measured their transport properties. At 0.3K, the densities and mobilities of the two dimensional holes can be tuned up to 2.9×1011∕cm2 and 6.4×105cm2∕Vs, respectively. The variable density high mobility two-dimensional hole system provides a large parameter space for the study of two-dimensional physics.