Abstract
The Sb2Te3 phase change material shows a growth-dominated crystallization mechanism with fast phase transition but poor thermal stability of the amorphous state. This work investigated the effects of carbon doping on the thermal stability, microstructure, and electrical properties of the Sb2Te3 material. The 10-year data retention temperature of the material increased to ∼147.3 °C and the size of the grains was limited to ∼10 nm by carbon doping. The formation of the C cluster upon crystallization was found at the grain boundaries, which was accelerated as the temperature increased due to the break of the Sb–C bonds. The memory device based on the carbon-doped Sb2Te3 material exhibited a switching speed of 15 ns and an endurance of ∼105 cycles with a resistance ratio of more than two orders of magnitude. This work suggests that the carbon-doped Sb2Te3 material is a promising candidate for memory applications that require high thermal stability, fast speed, and high endurance.
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