Understanding the conduction and switching mechanism of metal oxide RRAM through low frequency noise and AC conductance measurement and analysis

Abstract

Low frequency noise (LFN) and AC conductance measurement and analysis were performed on bipolar metal oxide resistive switching random access memory (RRAM) devices. The DC noise current power spectral density is 1/ƒα-like (1<α<2) and the AC conductance is ƒβ-like (β∼2). An electron tunneling model was established to elucidate the filamentary conduction process: the observed LFN behavior is a result of the distribution of transition time of electron tunneling between the electrode and the traps in the conductive filaments; and the observed AC conductance behavior arises from the electron tunneling between the nearest neighbor traps within the CFs.