A SPICE model of bi-layer resistive random access memory with stepped reset phenomenon

Yarong Fu Yarong Fu,Yinyin Lin Yinyin Lin,Juan Xu Juan Xu,Yanqing Zhao Yanqing Zhao,Xiaoyong Xue Xiaoyong Xue

doi:10.1109/icsict.2016.7998700

A SPICE model of bi-layer resistive random access memory with stepped reset phenomenon

Yarong Fu Yarong Fu, Yinyin Lin Yinyin Lin + Show 3 more

https://doi.org/10.1109/icsict.2016.7998700

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Publication Date: Oct 1, 2016

Affiliation: Fudan University

#Bi-layer Resistive Random Access Memory #Bipolar Resistive Random Access Memory + Show 8 more

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Abstract

In this paper a SPICE model of bi-layer and bipolar metal oxide resistive random access memory (RRAM) is proposed. Stepped reset phenomenon in bipolar RRAM is included and the impact of buffer layer thickness on Ireset is reproduced. The model is verified by experimental results from AlOx/WOx based RRAM [1,2]. This model is useful for multi bits storage circuit design, read reference circuit design and other RRAM circuit.

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