MoO<inf>3−x</inf>-based bipolar switching ReRAM fabricated by atomic layer deposition

Abstract

MoO 3−x -based Transition Metal Oxide Resistive Random Access Memory (ReRAM) devices were fabricated using atomic layer deposition, and their resistance-switching behaviors were investigated. The bipolar phenomenon was observed when 100-nm-thick Au were deposited by electron beam evaporation as bottom electrode (BE) and top electrode (TE), respectively. The proper electrical properties, such as excellent retention characteristic, low current and voltage operation are obtained with an Au/MoO 3−x /Au/Si structure.