Abstract
UV Raman and absorption measurements plots are used to demonstrate the improvement for InN samples following removal of a surface oxide by 1.0 M HCl etching. An increase in Raman spectra signal strength and a reduction of the apparent band-gap by up to 50 meV is observed. The thick surface oxide is believed to have formed as a result of ex-situ exposure of the samples on removal from the growth system. The importance of target nitridation for RF sputtered material is also demonstrated.
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