Abstract
ZnO double heterojunction structure was grown by molecular beam epitaxy. 100 nm MgZnO/ZnO/MgZnO well was inserted between Ga-doped ZnO and Sb-doped ZnO layers. X-ray diffraction spectrum confirmed the preferential growth along c-direction and secondary ion mass spectroscopy measurements showed a clear double heterojunction profile of this structure. Thin MgZnO layers made no difficulties for electrons and holes to get into active intrinsic ZnO layer. Dominant ultraviolet electroluminescence was observed at the injection currents from 40 to 80 mA at room temperature. The output power was 7.3 times as that from p-n homojunction diode at the same driving current due to a good confinement of electrons and holes in the intrinsic ZnO layer.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
