Abstract
We report on ultraviolet InGaN, GaN and InAlGaN multiple-quantum-well (MQW) laser diodes grown on sapphire substrates. Pulsed threshold current densities near 5 kA/cm 2 have been achieved for InGaN MQW laser diodes with emission wavelength between 368 nm and 378 nm and continuous-wave operation of ridge-waveguide devices with threshold currents of 85 mA and output power of more than 3 mW. We also demonstrate room-temperature pulsed operation of InAlGaN MQW laser diodes emitting at a wavelength of 359.9 nm. Light output powers greater than 80 mW under pulsed current-injection conditions (pulse duration 100 ns, repetition frequency 5 kHz) and differential quantum efficiencies of 4.2% have been achieved.
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