Abstract
Heterojunction light emitting diodes (LEDs) were fabricated by making Au∕Ni top Ohmic contacts on Sb-doped p-type ZnO film with low specific contact resistivity and Al∕Ti back Ohmic contacts on n-type Si substrate. Near-band edge and deep-level emissions were observed from the LED devices at both low temperatures and room temperature, which is due to band-to-band and band-to-deep level radiative recombinations in ZnO, respectively. The electroluminescence emissions precisely match those of photoluminescence spectra from Sb-doped p-type ZnO, indicating that the ZnO layer acts as the active region for the radiative recombinations of electrons and holes in the diode operation.
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