Abstract
Single step in situ ultrathin (5–12 nm) rapid thermal processing (RTP) silicon oxynitride dielectrics were fabricated on silicon and polysilicon planar and 3-D capacitor structures with sub-0.5 μm dimensions. Physical and electrical characterization results show that these ultrathin dielectrics are especially compatible for high density dynamic random access memory (DRAM) devices with 3-D stacked capacitors with sub-0.25 μm narrow fingered orifices.
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