Abstract
Ultrathin (<3nm) gate dielectrics made by plasma nitridation of SiO 2 films have been studied by a combination of physical (ellipsometry, Nuclear Reaction Analysis, Medium Energy Ion Scattering, and Atomic Force Microscopy) and electrical (C-V, I-V, and constant voltage stress) methods. The main observation we report here is a reduction of leakage current in the nitrided oxides at the expense of reduced (peak) mobility, flatband voltage shift (for high concentration of incorporated nitrogen) and lower breakdown strength.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
