Ultra-shallow arsenic profiling using enhanced depth-resolution analysis technique with medium energy ion scattering

M Takai,S Abo,H Sayama,F Wakaya,S Ichihara,T Eimori,Y Inoue

doi:10.1109/iwjt.2004.1306763

Ultra-shallow arsenic profiling using enhanced depth-resolution analysis technique with medium energy ion scattering

M Takai, S Abo + Show 5 more

https://doi.org/10.1109/iwjt.2004.1306763

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Publication Date: Mar 15, 2004

Affiliation: Renesas Electronics (Japan)

#Medium Energy Ion Scattering #Medium Energy Ion Scattering Spectra + Show 8 more

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Abstract

Medium Energy Ion Scattering (MEIS) using a toroidal electrostatic analyzer (TEA) with an energy resolution (/spl Delta/E/E) of 4 x 10/sup -3/ has been used for ultra-shallow depth profiling of As implanted in Si at 1-5 keV to a dose of 1.2 /spl times/ 10/sup 15/ ions/cm/sup 2/ before and after RTA and spike annealing. Depth profiling results extracted from MEIS spectra were compared with those of simulation and SIMS measurement. The arsenic re-distribution close to the surface after spike annealing was found by MEIS and SIMS measurements.

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