Abstract
Medium energy ion scattering (MEIS) combining a toroidal electrostatic analyzer with an energy resolution (d E/ E) of 4 × 10 −3 has been used for ultra-shallow depth profiling of As implanted into Si at 1, 2 and 5 keV to a dose of 1.2 × 10 15 ions/cm 2 before and after spike annealing at 1075 °C. Depth profiling results extracted from MEIS spectra were compared with those of simulation and SIMS measurement. The arsenic re-distribution close to the surface after spike annealing was found by MEIS and SIMS measurements.
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