Abstract
Ultra shallow arsenic profiles implanted into Si with an energy range from 0.5 to 3 keV to a dose of 8/spl times/10/sup 14/ ions/cm/sup 2/ before and after spike annealing were measured by medium energy ion scattering (MEIS) with a toroidal electrostatic analyzer (TEA). A shift of the peak of arsenic profile to the surface after spike annealing was observed by MEIS measurement. Most of the implanted arsenic atoms were trapped in the native oxide layer after spike annealing.
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