Abstract
This combined experimental and theoretical investigation reveals that the relaxation of electrons at high excess energy in the conduction band of silicon takes place as two distinctive processes with different time scales, an ultrafast momentum quasiequilibration over the Brillouin zone within 10 fs and a slower energy relaxation of the hot-electron ensembles. The energy relaxation rate is proportional to the electronic density of states over a large range of excess energies. The work generalizes the concept of hot-electron ensembles in semiconductors.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
