Abstract
This combined experimental and theoretical investigation reveals that the relaxation of electrons at high excess energy in the conduction band of silicon takes place as two distinctive processes with different time scales, an ultrafast momentum quasiequilibration over the Brillouin zone within 10 fs and a slower energy relaxation of the hot-electron ensembles. The energy relaxation rate is proportional to the electronic density of states over a large range of excess energies. The work generalizes the concept of hot-electron ensembles in semiconductors.
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